In Atomera’s testing, MST enabled more than a 10x reduction in parasitic channel charge, reducing a key mechanism of RF power ...

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...

New research points to safer devices with less loss at low voltages, but problems remain for high-voltage industrial ...

High efficiency power amplifiers (PAs) are pivotal in modern radio-frequency (RF) systems, underpinning wireless communication, radar and satellite links. Advances in compound semiconductor ...

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...