Radio-frequency chips for cell phones and other wireless products have long relied on the speed, low signal distortion and power-handling capabilities of gallium arsenide (GaAs) chips. Yet silicon ...

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Sometimes, a technique or technology that initiates a radical or dramatic advance is soon itself overtaken by a variation or improvement on that initial innovation, with an excellent example being ...

Researchers in Europe have found a way to make silicon-germanium (SiGe) alloys emit light efficiently, a breakthrough that has the potential to revolutionize integrated silicon photonics. In that ...

A description of the evolution of metal-oxide-semiconductor device architectures and the corresponding requirements on epitaxial growth schemes will be followed by a discussion of the obtained ...

Texas Instrument's Richard Zarr reviews the differences between Silicon-Germanium BiCMOS and small-geometry CMOS when it comes to driving high-speed data transmission lines. The CMOS process was the ...

The 8HP silicon-germanium (SiGe) process doubles its predecessor's performance. This IBM development utilizes 130-nm design rules to achieve a top transistor cutoff frequency (f T) of 200 GHz.

GlobalFoundries used its first-quarter 2026 earnings call to spotlight advances in silicon photonics (SiPh), co-packaged optics (CPO), and silicon-germanium (SiGe) development while reporting improved ...