A new technical paper, “Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors,” was published by researchers at Sandia National ...
A new technical paper titled “Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts” was published by researchers at National Yang Ming Chiao Tung University. “This ...
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