Blue lasers with surface gratings are delivering quantum precision from millimetre footprints. The visible spectrum is an exciting frontier for laser diode technology. Here emerging applications exist ...

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...

Rohm has decided to combine its own development and manufacturing technologies for GaN power devices with TSMC’s process ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

The VCSEL is an indispensable source in modern optoelectronics, where it is valued for its high beam quality, low threshold current, and compatibility with wafer-level processing.

ROHM Co., Ltd. (hereinafter "ROHM") has decided to integrate its own development and manufacturing technologies for GaN power devices with the process technology of TSMC, with which ROHM has an ...

Enabling scalable power for AI computing and next-generation robotics Our new GaN integrated circuits enable more ...

Gallium nitride (GaN) market to reach $3 billion by 2030, growing at 44% CAGR: Infineon Report ...

(MENAFN- EIN Presswire) EINPresswire/ -- Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN ®) power devices, will showcase its latest generation GaN ...

The move builds on ROHM’s longstanding partnership with TSMC, through which the companies have already established an ...

Specialty devices are the unsung heroes of modern life. For many in the semiconductor industry today, the spotlight is on the SiC and GaN power devices used in automotive, green energy, fast-charge ...